Published December 8, 2010 | Version v1
Journal article

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

  • 1. National Research Laboratory of Charged Nanoparticles, Department of Materials Science and Engineering, Seoul National University, Sillim-dong, Gwanak-gu, Seoul 151-744 (Korea, Republic of)

Description

The critical role of charged nanoclusters and nanoparticles in the growth of thin films and nanostructures by chemical vapour deposition (CVD) is reviewed. Advanced nanoparticle detection techniques have shown that charged gas-phase nuclei tend to be formed under conventional processing conditions of thin films and nanostructures by thermal, hot-wire and plasma CVD. The relation between gas-phase nuclei and thin film and nanostructure growth has not been clearly understood. In this review it will be shown that many films and nanostructures, which have been believed to grow by individual atoms or molecules, actually grow by the building blocks of such charged nuclei. This new growth mechanism was revealed in an attempt to explain many puzzling phenomena involved in the gas-activated diamond CVD process. Therefore, detailed thermodynamic and kinetic analyses will be made to draw the conclusion that the well-known phenomenon of deposition of less stable diamond with simultaneous etching of stable graphite should be an indication of diamond growth exclusively by charged nuclei formed in the gas phase. A similar logic was applied to the phenomenon of simultaneous deposition and etching of silicon, which also leads to the conclusion that silicon films by CVD should grow mainly by the building blocks of charged nuclei. This new mechanism of crystal growth appears to be general in many CVD and some physical vapour deposition (PVD) processes. In plasma CVD, this new mechanism has already been utilized to open a new field of plasma-aided nanofabrication. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/43/48/483001

Additional details

Identifiers

DOI
10.1088/0022-3727/43/48/483001;
PII
S0022-3727(10)36181-X;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
43
Journal Issue
48
Journal Page Range
[38 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42068562
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIAMONDS; ETCHING; GRAPHITE; NANOSTRUCTURES; PARTICLES; PHYSICAL VAPOR DEPOSITION; SILICON; THIN FILMS
Descriptors DEC
CARBON; CHEMICAL COATING; DEPOSITION; ELEMENTS; FILMS; MINERALS; NONMETALS; SEMIMETALS; SURFACE COATING; SURFACE FINISHING