Published 1991 | Version v1
Book

Effect of ion implantation on YBCO superconductor thin film

  • 1. Houston Univ., TX (United States). Dept. of Chemistry
  • 2. Houston Univ., TX (United States). Dept. of Physics

Description

This paper reports on the effect of the H+, C+, N+, F+, and Ne+ (25-200 keV) ion irradiations that have been investigated by means of SEM, room temperature resistance measurement and aqueous degradation test. The room temperature resistance increases exponentially with irradiation doses. At lower dose, the annealing process is dominant, while at higher dose, the resistance increasing process is dominant. A reduction in the thickness induced by ion irradiation has been observed. The aqueous experiment shows that passing current will speed up the degredation and N+ implantation can increase the resistance of the YBCO thin film against attack by water

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-007-0
Imprint Title
Surface chemistry and beam-solid interactions
Imprint Pagination
634 p.
Journal Page Range
p. 331-336.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
24 Nov - 1 Dec 1990.
Place
Boston, MA (United States).

Optional Information

Secondary number(s)
CONF-901105--.