Published 1997
| Version v1
Miscellaneous
Doped tungsten selenides as semiconductor materials
Description
The cadmium doped tungsten selenides have been prepared by chemical vapor deposition utilizing the redox reactions in initial reacting mixture. The chemical composition, crystal structure and electrical parameters of obtained material have been controlled. The material had the polycrystalline layer structure with hexagonal lattice. The next intermetallic compounds have been identified: Cd0.2WSe2, Cd0.33WSe2 and Cd0.5WSe2. The new material can be used as a photo electrodes in solar photocells. 9 refs, 1 fig
Additional details
Additional titles
- Original title (Polish)
- Interkalowane selenki wolframu jako materialy polprzewodnikowe
Publishing Information
- Imprint Title
- Materials of 6. Scientific Conference on Electronic Technology. Vol. 1
- Imprint Pagination
- [1506 p.].
- Journal Page Range
- p. 307-310.
Conference
- Title
- 6. Scientific Conference on Electronic Technology.
- Original Conference Title
- 6. Konferencja Naukowa Technologia Elektronowa
- Dates
- 6-9 May 1997.
- Place
- Krynica (Poland).
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 28071322
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- CADMIUM; CADMIUM SELENIDES; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; CRYSTAL DOPING; ELECTRICAL PROPERTIES; INTERMETALLIC COMPOUNDS; MEETINGS; MICROSTRUCTURE; REDOX REACTIONS; SEMICONDUCTOR MATERIALS; TUNGSTEN SELENIDES
- Descriptors DEC
- ALLOYS; CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; DEPOSITION; ELEMENTS; MATERIALS; METALS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Notes
- Imprint:Materialy 6. Konferencji Naukowej Technologia Elektronowa. T. 1.