Materials basic technology for heat and radiation resistant semiconductor elements

In 1997 fiscal year, elucidation of plantation mechanism on cubic (3C-SiC) epitaxial film prepared by low pressure CVD method before last fiscal year at atomic level, and evaluation on Schottky junction formed onto the epitaxial film were conducted. On conducting control technology, an evaluation on ion implantation and post annealing effect under high temperature less than 800degC from both sides of structural and electrical properties was conducted. And, an observation of microprobe induced charge distribution for an object of Si On Insulator (SOI) with high radiation resistance on micro feature evaluation for element structure of heat and radiation resistant semiconductor was also conducted. (G.K.)