Published November 18, 2013
| Version v1
Journal article
Improved visible light driven photoelectrochemical properties of 3C-SiC semiconductor with Pt nanoparticles for hydrogen generation
Creators
- 1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
- 2. Department of Applied Chemistry, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
- 3. Program for Leading Graduate Schools, Academy for Co-Creative Education of Environment and Energy Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
Description
We propose the n-type 3C-SiC with Pt nanoparticles (Pt NPs) as photo-anode for photoelectrochemical hydrogen (H2) generation. We found that band-edge structure of 3C-SiC is suitable for H2 generation, and the property can be optimized by dopant (nitrogen) concentration in 3C-SiC. We also confirmed that Pt NPs enhance photoelectrochemical properties showing 0.2%–0.8% higher Incident Photon-to-Current Efficiency than bare 3C-SiC in visible wavelength despite diminished light absorption. Solar-conversion efficiency increases approximately 6.3 times, and H2 production is improved by 6.5 times with 33% of Faradaic efficiency. Lastly, 3C-SiC surface corrosion is effectively inhibited
Additional details
Identifiers
- DOI
- 10.1063/1.4832333;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 103
- Journal Issue
- 21
- Journal Page Range
- p. 213901-213901.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45038821
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ABSORPTION; ABUNDANCE; ANODES; APPROXIMATIONS; CONCENTRATION RATIO; CORROSION; ECOLOGICAL CONCENTRATION; EFFICIENCY; HYDROGEN; INTERSTITIAL HYDROGEN GENERATION; NANOSTRUCTURES; NITROGEN; PHOTONS; PLATINUM; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SURFACES; WAVELENGTHS
- Descriptors DEC
- BOSONS; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; CHEMICAL REACTIONS; DIMENSIONLESS NUMBERS; ELECTRODES; ELEMENTARY PARTICLES; ELEMENTS; MASSLESS PARTICLES; MATERIALS; METALS; NONMETALS; PHYSICAL RADIATION EFFECTS; PLATINUM METALS; RADIATION EFFECTS; SILICON COMPOUNDS; SORPTION; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC