Published November 18, 2013 | Version v1
Journal article

Improved visible light driven photoelectrochemical properties of 3C-SiC semiconductor with Pt nanoparticles for hydrogen generation

  • 1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
  • 2. Department of Applied Chemistry, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
  • 3. Program for Leading Graduate Schools, Academy for Co-Creative Education of Environment and Energy Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)

Description

We propose the n-type 3C-SiC with Pt nanoparticles (Pt NPs) as photo-anode for photoelectrochemical hydrogen (H2) generation. We found that band-edge structure of 3C-SiC is suitable for H2 generation, and the property can be optimized by dopant (nitrogen) concentration in 3C-SiC. We also confirmed that Pt NPs enhance photoelectrochemical properties showing 0.2%–0.8% higher Incident Photon-to-Current Efficiency than bare 3C-SiC in visible wavelength despite diminished light absorption. Solar-conversion efficiency increases approximately 6.3 times, and H2 production is improved by 6.5 times with 33% of Faradaic efficiency. Lastly, 3C-SiC surface corrosion is effectively inhibited

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
103
Journal Issue
21
Journal Page Range
p. 213901-213901.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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