Published November 2009
| Version v1
Journal article
The reflectivity of an etched silicon surface with pyramids: I. Theoretical model and its predictions
Creators
- 1. Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan City 701, Taiwan (China)
- 2. Department of Mechanical Engineering, National Cheng Kung University, Tainan City 701, Taiwan (China)
Description
In the present paper, a 3D model is developed to evaluate the reflectivity of an etched surface with pyramids. This model determines primary and secondary reflections by tracing parallel light beams from the location of each surface element. The model is then applied to predict total reflectivity and area fraction of illumination as a function of the angle of incidence and mean pyramid height. The reduction in the reflectivity of a surface is obtained by increasing the mean pyramid height, or by increasing the angle of incidence, irrespective of the mean pyramid height. However, the reflectivity is asymptotic to a constant value as the angle of incidence is lowered to a sufficiently small value
Availability note (English)
Available from http://dx.doi.org/10.1088/0960-1317/19/11/115015Additional details
Identifiers
- DOI
- 10.1088/0960-1317/19/11/115015;
- PII
- S0960-1317(09)17290-X;
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering. Structures, Devices and Systems
- Journal Volume
- 19
- Journal Issue
- 11
- Journal Page Range
- [7 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45007743
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- FORECASTING; INCIDENCE ANGLE; REFLECTIVITY; SILICON; SURFACES
- Descriptors DEC
- ELEMENTS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE PROPERTIES