Published November 2009 | Version v1
Journal article

The reflectivity of an etched silicon surface with pyramids: I. Theoretical model and its predictions

  • 1. Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan City 701, Taiwan (China)
  • 2. Department of Mechanical Engineering, National Cheng Kung University, Tainan City 701, Taiwan (China)

Description

In the present paper, a 3D model is developed to evaluate the reflectivity of an etched surface with pyramids. This model determines primary and secondary reflections by tracing parallel light beams from the location of each surface element. The model is then applied to predict total reflectivity and area fraction of illumination as a function of the angle of incidence and mean pyramid height. The reduction in the reflectivity of a surface is obtained by increasing the mean pyramid height, or by increasing the angle of incidence, irrespective of the mean pyramid height. However, the reflectivity is asymptotic to a constant value as the angle of incidence is lowered to a sufficiently small value

Availability note (English)

Available from http://dx.doi.org/10.1088/0960-1317/19/11/115015

Additional details

Identifiers

DOI
10.1088/0960-1317/19/11/115015;
PII
S0960-1317(09)17290-X;

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Journal Volume
19
Journal Issue
11
Journal Page Range
[7 p.]
ISSN
0960-1317
CODEN
JMMIEZ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45007743
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
FORECASTING; INCIDENCE ANGLE; REFLECTIVITY; SILICON; SURFACES
Descriptors DEC
ELEMENTS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE PROPERTIES