Published March 15, 2003
| Version v1
Journal article
Effect of growth temperature on ZnO thin film deposited on SiO2 substrate
Creators
Description
We investigated the effect of deposition temperature on the growth and structural quality of ZnO films on SiO2 substrate in the range of 100-250 deg. C using the metal organic chemical vapor deposition (MOCVD) technique. We revealed that highly c-axis oriented ZnO thin films were obtained at the temperature of 200-250 deg. C and the ZnO thin film was successfully deposited at the lower temperature of 100-150 deg. C. The c-axis orientation of the film improved and the grain size increased by increasing growth temperature
Additional details
Identifiers
- DOI
- 10.1016/S0921-5107;
- PII
- S0921510702007547;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 98
- Journal Issue
- 2
- Journal Page Range
- p. 135-139
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37046179
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GRAIN SIZE; ORIENTATION; SILICA; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; FILMS; MICROSTRUCTURE; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SIZE; SURFACE COATING; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.