Structural-phase transformations n gallium arsenide implanted with phosphorous and argon ions

The processes of the structural disorder in GaAs implanted by phosphorus and argon ions with different beam current densities have been investigated by the methods of Raman spectroscopy and helium ions channeling. With the dose growth two cycles of the crystal - amorphous state - crystal transitions in dose intervals 6x1012...4x1013...3x1015 cm-2 have been observed at the beam current density 3 and 1 μA/cm2 according for Ar+ and Pr+. At smaller beam current densities the disorder degree increases monotonously with dose