Nitrogen Plasma Ion Implantation of Al and Ti alloys in the High Voltage Glow Discharge Mode
- 1. Associated Laboratory of Plasma, National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos, Sao Paulo (Brazil)
- 2. Institute of Ion Beam Physics and Materials Research, Rossendorf, Dresden (Germany)
- 3. Department of Physics, Federal University of Parana, Curitiba, Parana (Brazil)
- 4. Associated Laboratory of Materials and Sensors, National Institute for Space Research (Brazil)
Description
Enhanced surface properties can be attained for aluminum and its alloys (mechanical and tribological) and Ti6Al4V (mainly tribological) by Plasma Immersion Ion Implantation (PIII) technique. The main problem here, more severe for Al case, is the rapid oxygen contamination even in low O partial pressure. High energy nitrogen ions during PIII are demanded for this situation, in order to enable the ions to pass through the formed oxide layer. We have developed a PIII system that can operate at energies in excess of 50keV, using a Stacked Blumlein (SB) pulser which can nominally provide up to 100 kV pulses. Initially, we are using this system in the High Voltage Glow Discharge (HVGD) mode, to implant nitrogen ions into Al5052 alloy with energies in the range of 30 to 50keV, with 1.5μs duration pulses at a repetition rate of 100Hz. AES, pin-on-disc, nanoindentation measurements are under way but x-ray diffraction results already indicated abundant formation of AlN in the surface for Al5052 treated with this HVGD mode. Our major aim in this PIII experiment is to achieve this difficult to produce stable and highly reliable AlN rich surface layer with high hardness, high corrosion resistance and very low wear rate
Additional details
Identifiers
- DOI
- 10.1063/1.2401502;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 866
- Journal Issue
- 1
- Journal Page Range
- p. 233-236
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 16. international conference on ion implantation technology
- Acronym
- IIT 2006
- Dates
- 11-16 Jun 2006
- Place
- Marseille (France)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38056361
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ALUMINIUM ALLOYS; ALUMINIUM NITRIDES; AUGER ELECTRON SPECTROSCOPY; CORROSION RESISTANCE; DEPOSITION; ELECTRIC POTENTIAL; GLOW DISCHARGES; HARDNESS; ION IMPLANTATION; NITROGEN; NITROGEN IONS; OXIDES; OXYGEN; PARTIAL PRESSURE; PLASMA; SURFACE PROPERTIES; TITANIUM; TITANIUM ALLOYS; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ELECTRIC DISCHARGES; ELECTRON SPECTROSCOPY; ELEMENTS; IONS; MECHANICAL PROPERTIES; METALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SPECTROSCOPY; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2006 American Institute of Physics