Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction

Nonpolar (11-20) GaN films with different basal-plane stacking fault (BSF) densities (determined using transmission electron microscopy) were investigated using X-ray diffraction. Diffuse streaking from I1 and I2 BSFs was observed in reciprocal space maps of the 10-10 and 20-20 reflections. X-ray calibration curves for BSF density determination can be plotted using the diffusely scattered intensity of open detector 10-10 or 20-20 ω-scans measured at a fixed, large separation from the peak maximum. However, ab initio determination of stacking fault densities is not possible due to additional broadening from other defects. Similarly, ω-scan peak widths are poor indicators of BSF densities.