Depth profiling using total reflection X-ray fluorescence spectrometry alone and in combination with ion beam sputtering

The capability of total reflection X-ray fluorescence spectrometry (TXRF) for depth profiling is examined by means of selected examples including organometallic layers, an implantation profile of arsenic in silicon and a layered nickel/cobalt structure. For structures without density differences that are deeper than 20 nm or so, and also for buried layers and for the examination of sharp interfaces, which require the highest resolution, two different combinations of ion beam sputtering with TXRF have been employed. A microsectioning technique was investigated in which samples were etched to a bevel shape and subsequently scanned by TXRF. A depth resolution of 2.5 nm was obtained. Alternatively, the so called ''transfer technique'' was investigated. This involves surface atoms being sputtered by an ion beam and immediately deposited on a silicon wafer rotated behind a slit which is moved in step with the sputter progress. Subsequently, the wafer is scanned by TXRF. Using this technique, the width of a coherent Ti/Al interface within a layered structure was measured to be 1.4 nm. The depth resolutions of the ''microsectioning'' and the ''transfer'' techniques are compared with data from RBS, XPS, SIMS and SNMS. (Author)