Kinetics of resistive response of SnO2-x thin films in gas environment

Data on the gas sensitivity of SnO2-x thin films in oxygen and hydrogen environment are obtained. The films were fabricated by oxidizing metallic tin layers in air at various temperatures. The nonmonotonic kinetics of the resistive response of SnO2-x samples under gas-adsorption conditions is explained by the involvement of 'biographic' electron states (determined by the manufacturing methods and machining of samples), whose density depends on the temperature conditions of manufacturing the SnO2-x film in the adsorbate-semiconductor interaction