Published November 1995 | Version v1
Journal article Metadata-only

Electrical characteristics of Metal-Resistive layer-Silicon (MRS) avalanche detectors

Creators

  • 1. INFN, Sezione di Padova (Italy)
  • 2. Padua Univ. (Italy). Dipt. di Fisica
  • 3. Istituto di Elettrotecnica, Univ. di Cagliari (Italy)
  • 4. Laboratory of High Energy, Joint Inst. for Nuclear Research, Dubna (Russian Federation)
  • 5. Azerbaijan Academy of Sciences, Baku (Azerbaijan). Inst. of Physics

Description

The main electrical characteristics at room temperature of Metal-Resistive layer-Silicon avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. Hysteresis of the I-V characteristics and transients taking place during tests at fixed bias have been experimentally studied, in correlation also with the effect of ionizing radiation. The device time response has been tested by using a 90Sr source. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Physics. B, Proceedings Supplements
Journal Volume
44
Journal Page Range
p. 397-401.
ISSN
0920-5632
CODEN
NPBSE7

Conference

Title
4. international conference on advanced technology and particle physics.
Dates
3-7 Oct 1994.
Place
Como (Italy).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
27019936
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BETA DETECTION; BREAKDOWN; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; HYSTERESIS; JUNCTION DETECTORS; LAYERS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PULSES; RESPONSE FUNCTIONS; SI SEMICONDUCTOR DETECTORS; SILICON; SILICON CARBIDES; TEMPERATURE RANGE 0273-0400 K; TIMING PROPERTIES; TITANIUM; TRANSIENTS
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLE DETECTION; DETECTION; ELECTRICAL PROPERTIES; ELEMENTS; FUNCTIONS; MATERIALS; MEASURING INSTRUMENTS; METALS; PHYSICAL PROPERTIES; RADIATION DETECTION; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS