Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films

The effect of the ion-implanted surface layer on the relationship between the bubble deflection angle theta and the in-plane field H sub(1p) is investigated. The samples used are either etched a part of the surface layer implanted Ne+ ions of 100 keV to a dosage of 7 x 1013 cm-2 or implanted to various dosages. In the samples implanted to a dosage of 7 x 1013 cm-2, it is found that the effective layer determining the wall structure of the underlying bubble exists in the region between 500 and 800 A deep from the surface. In the sample implanted to as high dosage as 1015 cm-2, theta varies with increasing and then decreasing H sub(1p) gradually rather than abruptly as generally seen. These results are interpreted based on the relevant works on the magnetic properties of the ion-implanted layer and the bubble state transitions. (author)