Effect of growth defects on electrophysical properties of radiationally doped silicon

Effect of the non-dislocated growth defects on electrophysical properties of radiationally doped silicon is investigated. It is shown that growth defects can influence the degree of distribution uniformity of phosphorus concentration introduced at the expense of 30Si(n,γ) 31Si β- → 2.6 h 31P nuclear reaction, and can be, probably, with heavy admixture atoms (Cu, Au and etc.) effective recombination centers. Growth defects are supposed to become active resulting from their interaction with radiative defects