Published October 1992
| Version v1
Journal article
Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells
- 1. Stanford Univ., CA (United States). Solid-State Electronics Lab.
- 2. Arizona Univ., Tucson, AZ (United States). Optical Sciences Center
- 3. Sandia National Labs., Albuquerque, NM (United States)
- 4. Photonic Research, Inc., Broomfield, CO (United States)
Description
Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs--AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. In this paper the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described
Additional details
Publishing Information
- Journal Title
- IEEE Journal of Quantum Electronics
- Journal Volume
- 28
- Journal Issue
- 10
- Journal Page Range
- p. 2404-2415.
- ISSN
- 0018-9197
- CODEN
- IEJQA7
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24026154
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM ARSENIDES; ANGULAR DISTRIBUTION; ELECTRIC FIELDS; ELECTRONS; EXCITONS; GAIN; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; LASERS; NONLINEAR OPTICS; RESONANCE; SEPARATION PROCESSES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; AMPLIFICATION; AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; DISTRIBUTION; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; OPTICS; PNICTIDES; QUASI PARTICLES; SEMICONDUCTOR JUNCTIONS