Published October 1992 | Version v1
Journal article

Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells

  • 1. Stanford Univ., CA (United States). Solid-State Electronics Lab.
  • 2. Arizona Univ., Tucson, AZ (United States). Optical Sciences Center
  • 3. Sandia National Labs., Albuquerque, NM (United States)
  • 4. Photonic Research, Inc., Broomfield, CO (United States)

Description

Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs--AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. In this paper the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described

Additional details

Publishing Information

Journal Title
IEEE Journal of Quantum Electronics
Journal Volume
28
Journal Issue
10
Journal Page Range
p. 2404-2415.
ISSN
0018-9197
CODEN
IEJQA7