Published February 1984
| Version v1
Journal article
Influence of the irradiation rate on the rate of annihilation of vacancies and interstitials in silicon
Creators
- 1. Scientific-Research Institute of Applied Physics Problems at the V. I. Lenin Belorussian State University, Minsk
Description
Influence of irradiations rate on He rate of annihilations of primary radiation defects in silicon is studied
Additional details
Publishing Information
- Journal Title
- Sov. Phys. - Semicond. (Engl. Transl.)
- Journal Volume
- 18
- Journal Issue
- 2
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 215-216
- ISSN
- 0038-5700
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16009844
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- A CENTERS; AIR; COOLING; DIMENSIONS; DOSE RATES; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FRENKEL DEFECTS; GAMMA RADIATION; GAS FLOW; HALL EFFECT; LIFETIME; MEDIUM TEMPERATURE; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PULSES; SILICON; TEMPERATURE DEPENDENCE; VACANCIES
- Descriptors DEC
- BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; FLUID FLOW; FLUIDS; GASES; IONIZING RADIATIONS; LEPTON BEAMS; MATERIALS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).