p-type co-doping effect of (Ga,Mn)P: Magnetic and magneto-transport properties

Highlights: • In this work we investigated the co-doping effect in GaMnP film. • GaMnP:Zn film is firstly obtained by ion implantation and pulsed laser melting. • The conductivity is enhanced by zinc doping. • The temperature dependent magnetoresistance behavior is modified by Zn doping. In this paper, we perform a comparison of magnetic and electrical properties between Mn-doped and (Mn, Zn) co-doped GaP dilute ferromagnetic semiconductors. Due to the shallow Zn impurity level (∼20–40 meV above the top of the III-V compounds valence band), the Zn co-doping leads to the increase of conductivity of (Ga,Mn)P, however both the Curie temperature and magnetization reduce, which is probably due to the suppression of active Mn substitution by Zn co-doping.