Published 1971
| Version v1
Book
Effect of a low energy ion bombardment on the characteristics of Schottky barriers
Creators
- 1. Laboratoires d'Electronique et de Physique Appliquee (LEP), 94 - Limeil-Brevannes (France)
Description
no abstract available
Additional details
Additional titles
- Original title (French)
- Influence d'un bombardement ionique de faible energie sur les caracteristiques des barrieres Schottky
Publishing Information
- Publisher
- Societe Francaise des Ingenieurs et Techniciens du Vide.
- Imprint Place
- Paris, France
- Imprint Title
- International colloquium on the application of vacuum techniques to the semiconductor industry electronic and microelectronic components. AVISEM 71
- Imprint Pagination
- p. 80-85.
Conference
- Title
- International colloquium on the application of vacuum techniques to the semiconductor industry electronic and microelectronic components. AVISEM 71.
- Dates
- 13 Sep 1971.
- Place
- Versailles, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 3024573
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIC COMPOUNDS; GALLIUM COMPOUNDS; ION BEAMS; RADIATION EFFECTS; RARE GASES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- BEAMS; ELEMENTS; NONMETALS; SEMICONDUCTOR DEVICES
Optional Information
- Notes
- Imprint:Colloque international sur les applications des techniques du vide a l'industrie des semiconducteurs, des composants electroniques et de la microelectronique. AVISEM 71.