Synthesis of SiC nanowires from gaseous SiO and pyrolyzed bamboo slices

Bamboo slices have been pyrolyzed by heat treatment in an inert atmosphere at 1000 deg. C. The reaction of gaseous SiO and pyrolyzed bamboo slices at 1300 deg. C resulted in the formation of SiC nanowires. Microstructure characterization of the SiC nanowires was carried out by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). XRD analysis showed that the reaction product is crystalline β-SiC. The diameter and the length of the SiC nanowires is ranging from 20∼70nm to 10∼20μm. Most of the SiC nanowires possess straight and smooth morphology. SiC nanowires have a preferential growth axis parallel to the [111] direction.