Oxygen vacancy and E_C − 1 eV electron trap in ZnO

Fourier transform deep level transient spectroscopy has been performed between 80 and 550 K in five n-type ZnO samples grown by different techniques. The capture cross section and ionization energy of four electron traps have been deduced from Arrhenius diagrams. A trap 1 eV below the conduction band edge is systematically observed in the five samples with a large apparent capture cross section for electrons (1.6 ± 0.4 × 10⁻¹³ cm²) indicating a donor character. The assignment of this deep level to the oxygen vacancy is discussed on the basis of available theoretical predictions. (paper)