Published July 2010 | Version v1
Journal article

Thermal properties of semiconductor zinc oxide nanostructures

  • 1. Quantum-functional semiconductor Research Center, Dongguk Univ.-Seoul (Korea, Republic of)
  • 2. Department of thermophysics of the Academy of sciences of Republic Uzbekistan, Tashkent (Uzbekistan)
  • 3. A.V. Lykov inst. of heat and mass transfer, NAS of Belarus, Minsk (Belarus)

Description

A combination of two methods - laser modulation and 3? - has been used to determine the heat capacity, heat conductivity, and heat diffusivity of zinc oxide nanostructures. A significant difference between the thermal parameters of zinc oxide nanostructures grown by different technological methods has been revealed. It has been shown that the relatively low heat conductivity and heat diffusivity values of oxide zinc nanostructures are due to both the internal defects and the contact resistance between the film and its base - the substrate. (authors)

Additional details

Additional titles

Original title (Russian)
Теплофизические свойства полупроводниковых наноструктур на основе оксида цинка

Publishing Information

Journal Title
Inzhenerno-Fizicheskij Zhurnal
Journal Volume
83
Journal Issue
4
Journal Page Range
p. 809-813
ISSN
0021-0285

Optional Information

Notes
30 refs., 3 tabs.