Published May 20, 2011 | Version v1
Journal article Metadata-only

Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

Creators

  • 1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
  • 2. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
  • 3. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407 (United States)

Description

We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/22/20/205204

Additional details

Identifiers

DOI
10.1088/0957-4484/22/20/205204;
PII
S0957-4484(11)74064-8;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
22
Journal Issue
20
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43027031
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ALCOHOLS; EQUIPMENT; OXYGEN; QUANTUM WIRES; SURFACES; TRANSISTORS; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; HYDROXY COMPOUNDS; NANOSTRUCTURES; NONMETALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; ZINC COMPOUNDS