Published April 15, 1982 | Version v1
Journal article Metadata-only

Encapsulant-free annealing of ion-implanted GaP

Creators

  • 1. Sandia National Labs., Albuquerque, NM (USA)

Description

no abstract available

Additional details

Publishing Information

Journal Title
Electron. Lett.
Journal Volume
18
Journal Issue
8
Series
Electron. Lett.
Journal Page Range
323
ISSN
0013-5194

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
13691826
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GALLIUM PHOSPHIDES; HIGH TEMPERATURE; ION IMPLANTATION; LEAKAGE CURRENT; MAGNESIUM IONS; MEDIUM TEMPERATURE; SEMICONDUCTOR DIODES; TEMPERATURE DEPENDENCE
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES

Optional Information

Notes
Brief note.