Plenum type crystal growth process

This patent describes a method of growing a crystal. It comprises dividing a crystal growth chamber into an upper crystal growing region and a lower plenum region by means of a stationary horizontal baffle extending across the chamber; providing a turbine tube through the baffle between the crystal growing region and plenum region; providing at least one return flow tube through the baffle between the crystals growing region and plenum region, each return flow tube having a diameter less than the turbine flow tube; filling the crystal growing region and plenum region with crystal growing solution; providing flow generating means in the turbine tube; continuously drawing crystal growing solution from the crystal growing region through the turbine tube into the plenum region