Published July 6, 2015 | Version v1
Journal article Metadata-only

Lateral damage in graphene carved by high energy focused gallium ion beams

Creators

  • 1. Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, Hallwachsstraße 3, 01069 Dresden (Germany)
  • 2. Dresden Center for Nanoanalysis (DCN), Technische Universität Dresden, Helmholtzstraße 18, 01069 Dresden (Germany)
  • 3. Fraunhofer Institute for Ceramic Technologies and Systems (IKTS), Maria-Reiche-Straße 2, 01109 Dresden (Germany)
  • 4. Professur für Makromolekulare Chemie, Department Chemie, Technische Universität Dresden, Mommsenstraße 4, 01069 Dresden (Germany)
  • 5. Dresden Center for Computational Materials Science (DCCMS), Technische Universität Dresden, Hallwachsstraße 3, 01069 Dresden (Germany)
  • 6. Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Würzburger Straße 46, 01187 Dresden (Germany)

Description

Raman mapping is performed to study the lateral damage in supported monolayer graphene carved by 30 keV focused Ga+ beams. The evolution of the lateral damage is tracked based on the profiles of the intensity ratio between the D (1341 cm−1) and G (1582 cm−1) peaks (ID/IG) of the Raman spectra. The ID/IG profile clearly reveals the transition from stage 2 disorder into stage 1 disorder in graphene along the direction away from the carved area. The critical lateral damage distance spans from <1 μm up to more than 30 μm in the experiment, depending on the parameters used for carving the graphene. The wide damage in the lateral direction is attributed to the deleterious tail of unfocused ions in the ion beam probe. The study raises the attention on potential sample damage during direct patterning of graphene nanostructures using the focused ion beam technique. Minimizing the total carving time is recommended to mitigate the lateral damage

Additional details

Identifiers

DOI
10.1063/1.4926647;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
1
Journal Page Range
p. 013108-013108.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47053140
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
DAMAGE; GALLIUM IONS; GRAPHENE; ION BEAMS; KEV RANGE 10-100; MAPPING; NANOSTRUCTURES; PEAKS; RAMAN SPECTRA
Descriptors DEC
BEAMS; CARBON; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; NONMETALS; SPECTRA

Optional Information

Notes
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