Published December 15, 1990
| Version v1
Journal article
Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs
Creators
- 1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan (Japan)
- 2. Electrotechnical Laboratory, Tsukuba, Ibaraki 305, (Japan)
- 3. The Institute of Physical and Chemical Research, Wako, Saitama 315-01, (Japan)
Description
In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 1013 /cm2, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350 degree C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2+) to the neutral EL20
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 68
- Journal Issue
- 12
- Series
- J. Appl. Phys.
- Journal Page Range
- 6517-6519
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22042823
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATTENUATION; GALLIUM ARSENIDES; INFRARED SPECTRA; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; PROTONS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CATIONS; CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; IONS; NUCLEONS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SPECTRA