Published 1998 | Version v1
Miscellaneous

Raman spectroscopy of optical phonons as a probe of sample characterization in GaN MBE epilayers

  • 1. Department of Physics, University of Essex, Colchester, Essex (United Kingdom)
  • 2. Department of Physics, University of Nottingham, Nottingham (United Kingdom)

Description

no abstract available

Part of:
Abstracts of The Third European GaN Workshop EGW-3

Additional details

Additional titles

Augmented title (English)
thin films

Publishing Information

Imprint Title
Abstracts of The Third European GaN Workshop EGW-3
Imprint Pagination
97 p.
Journal Page Range
p. 47

Conference

Title
3. European GaN Workshop EGW-3
Dates
22-24 Jun 1998
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31064558
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CRYSTAL STRUCTURE; GALLIUM ARSENIDES; GALLIUM NITRIDES; MEETINGS; MOLECULAR BEAM EPITAXY; ORIENTATION; PHONONS; RAMAN SPECTROSCOPY; SUBSTRATES; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; FILMS; GALLIUM COMPOUNDS; LASER SPECTROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; QUASI PARTICLES; SPECTROSCOPY

Optional Information