Determination of the concentration profiles of manganese and nickel implanted in silicon

A relationship was established between the ion-electron emission coefficient γ and the concentration of an impurity implanted in silicon. Experiments were carried out on Mn and Ni implanted in KBD silicon. The implantation doses were 5 x 1015-1.2 x 1017 cm-2 and the ion energy was 40 keV. The dependence of γ on the depth of the layer contributing to the emission of electrons had two maxima. The maximum closer to the surface was attributed to a maximum of the Lindhard impurity distribution and the deeper maximum was associated with the contribution of channeling during the impurity implantation process