Published December 1989
| Version v1
Journal article
On the nature of radiation-induced defects in n-type silicon irradiated by electrons of energies near the threshold of defect formation
- 1. AN SSSR, Leningrad (USSR). Fiziko-Tekhnicheskij Inst.
Description
Radiation-induced defects(RD), which are formed in n-base of silicon diodes, irradiated by 270 and 300 keV energy electrons, are investigated. The following complexes were determined by DLTS technique: vacancy-oxygen (A-center), oxygen-carbon-vacancy (K-center) and interstitial-node carbon. These RD and those, formed at silicon irradiation by 1 MeV energy electrons, are identical
Additional details
Additional titles
- Original title (Russian)
- О природе радиационных дефектов в н-кремнии, облученном электронами с энергией вблизи порога дефектообразования
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 23
- Journal Issue
- 12
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2129-2132
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 22006022
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- A CENTERS; ANNEALING; CRYSTALS; ELECTRON BEAMS; HOLES; INTERSTITIALS; KEV RANGE 100-1000; LIFETIME; LOW TEMPERATURE; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON DIODES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; KEV RANGE; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS; VACANCIES