Published January 22, 2003 | Version v1
Journal article

Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si δ-doped GaAs/In0.15Ga0.85As quantum wells

  • 1. Departamento de Ciencias Fisicas da Universidade Federal de Uberlandia, CP 595, 38400-902 Uberlandia, MG (Brazil)
  • 2. Instituto de Fisica da Universidade de Sao Paulo, Laboratorio de Novos Materiais Semicondutores, CP 66318, 05315-970 Sao Paulo, SP (Brazil)
  • 3. Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, CP 6165, 17083-970 Campinas, SP (Brazil)

Description

A series of GaAs/InGaAs quantum wells with a silicon δ-doped layer in the top barrier was investigated by Shubnikov-de Haas measurements as a function of the illumination time of the samples. During the illumination process strong modifications of the electronic density and the quantum mobility of each occupied subband were observed. Based on self-consistent calculations, the dominant mechanism which caused the changes in the subband quantum mobilities with illumination was elucidated

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/15/121/c30212.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
15
Journal Issue
2
Journal Page Range
p. 121-132
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
34023107
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRON DENSITY; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; ILLUMINANCE; INDIUM ARSENIDES; MOBILITY; SEMICONDUCTOR JUNCTIONS; SHUBNIKOV-DE HAAS EFFECT
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES