Published 1998 | Version v1
Miscellaneous Metadata-only

Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

Creators

  • 1. University of Tartu, Tartu, (Estonia). Institute of Experimental Physics and Technology
  • 2. Helsinki University of Technology, Espoo, (Finland). Laboratory of Inorganic and Analytical Chemistry
  • 3. Helsinki University of Technology, Espoo, (Finland). Center for Chemical Analysis

Description

Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y2O2S: Eu3+ for colour TV. Attempts to grow thin films of Y2O2S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H2S and Y(thd)3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y2O2S thin film which was characterized by XRD, XRF and XPS

Part of:
Rare earths'98. The international rare earths conference, including radio lanthanides in nuclear medicine therapy. Programme and abstracts

Additional details

Publishing Information

Imprint Title
Rare earths'98. The international rare earths conference, including radio lanthanides in nuclear medicine therapy. New technologies for the 21st century. Programme and abstracts
Imprint Pagination
125 p.
Journal Page Range
p. 57

Conference

Title
Rare earths'98. New technologies for the 21st Century
Dates
25-30 Oct 1998
Place
Fremantle, WA (Australia)

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
32044176
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
CRYSTAL GROWTH; DOPED MATERIALS; EPITAXY; OXYSULFIDES; PHOSPHORS; STRUCTURAL CHEMICAL ANALYSIS; THIN FILMS; YTTRIUM COMPOUNDS
Descriptors DEC
CRYSTAL GROWTH METHODS; FILMS; MATERIALS; OXYGEN COMPOUNDS; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
This record replaces 31022476 Imprint:The full text of the papers presented at the conference could be found in Materials Science Forum (1999), Vols. 315-317