The thin film metal-insulator-metal system used as a non-heated source of electrons

A review and analysis of work on the investigation of 'formed' metal-insulator-metal (MIM) systems based on oxynitride films of silicon is presented. All the properties of formed MIM systems: emission of electrons into vacuum n-type volt-ampere characteristics, effects of switching and memory, influence of the surrounding atmosphere, and so on, are explained from a single viewpoint. The thin film MIM system with optimal choice of components and working regime can serve as an effective emitter of hot electrons. In contrast to the tunnel and thick film (multilayer) MIM and MSIM systems, structures with a layer of insulator of thickness 200-1000 Angstrom are subjected to the so-called forming process which results in (a) a transmission current increase by a factor of some orders of magnitude (b) intense electron emission, (c) electroluminescence, (d) the formation of an n-type current-voltage characteristic, (e) in observed effects of switching and memory, and so on. A comprehensive analysis of MIM systems based on the silicon oxynitride film (Sisub(x)Nsub(y)Osub(z)) enables all its properties to be explained from a single viewpoint. Some of the regularities revealed may apparently be generalized over the whole class of formed MIM systems. (author)