Published December 2008 | Version v1
Journal article Metadata-only

A study of the transport of charge carriers in coupled quantum regions

Creators

  • 1. Russian Academy of Sciences, Southern Scientific Center (Russian Federation)
  • 2. Southern Federal University, Technological Institute (Russian Federation)

Description

Specific features of controlled relocation of charge carriers in nanostructures based on tunnelingcoupled quantum regions formed by GaAs/AlGaAs heterojunctions are considered. The results of numerical simulation of dynamics of controlled tunneling relocation of the maximum in the amplitudes of wave functions of charge carriers are discussed.

Additional details

Identifiers

DOI
10.1134/S1063782608130022;

Publishing Information

Journal Title
Semiconductors
Journal Volume
42
Journal Issue
13
Journal Page Range
p. 1462-1468
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41006174
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ALUMINIUM ARSENIDES; CHARGE CARRIERS; CHARGED-PARTICLE TRANSPORT; GALLIUM ARSENIDES; HETEROJUNCTIONS; NANOSTRUCTURES; SIMULATION; TUNNEL EFFECT; WAVE FUNCTIONS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; FUNCTIONS; GALLIUM COMPOUNDS; PNICTIDES; RADIATION TRANSPORT; SEMICONDUCTOR JUNCTIONS

Optional Information

Copyright
Copyright (c) 2008 Pleiades Publishing, Ltd.