Published 2009
| Version v1
Journal article
Irradiation studies of GaAs sensors in a high intensity electron beam
Creators
- 1. NCPHEP, Minsk, Bogdanovic Str. 153 (Russian Federation)
- 2. DESY, Zeuthen, Platanenallee 6 (Germany)
- 3. BTU Cottbus, Konrad-Zuse-Str. 1 (Germany)
Description
Sensors in the very forward calorimeters of an ILC experiment or for beam condition monitoring at the LHC have to withstand high radiation doses. Here we report on the performance of GaAs sensors as a function of the absorbed dose in a 10 MeV electron beam at the S-DALINAC (TU Darmstadt). Sensors with different chromium concentrations are produced by the Siberian Institute of Technology. The sensor thickness varies between 150 and 500 micrometers. The sensors are irradiated up to doses of 1.5 MGy. The leakage current and the charge collection efficiency are measured as a function of the absorbed dose
Additional details
Identifiers
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Issue
- Muenchen 2009 issue
- Series
- Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 44(2)
- Journal Page Range
- [1 p.]
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- 2009 DPG Spring meeting with the divisions of gravitation and theory of relativity, radiation- and medicine physics, particle physics, theoretical and mathematical foundations and the working group philosophy of physics
- Original Conference Title
- DPG Fruehjahrstagung 2009 der Fachverbaende Gravitation und Relativitaetstheorie, Strahlen- und Medizinphysik, Teilchenphysik, Theoretische und Mathematische Grundlagen der Physik und der Arbeitsgruppe Philosophie der Physik
- Dates
- 9-13 Mar 2009
- Place
- Muenchen (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 40105276
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE COLLECTION; EFFICIENCY; ELECTRON COLLISIONS; GALLIUM ARSENIDES; LEAKAGE CURRENT; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COLLISIONS; CURRENTS; ELECTRIC CURRENTS; ENERGY RANGE; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; MEV RANGE; PNICTIDES; RADIATION DETECTORS; RADIATION EFFECTS
Optional Information
- Notes
- Session: T 57.5 Mi 17:45; No further information available