Published 1989 | Version v1
Report Metadata-only

Ion implantation into InP/InGaAs heterostructures grown by MOVPE

Creators

  • 1. Siemens Research Labs., Muenchen (Germany, F.R.)

Description

Annealing of Beryllium implantations into epitaxial InP/InGaAs heterostructures was investigated. Different ion energies were used to position the profile maximum in the InP cap, at the hetero-interface, or in the underlying InGaAs layer. By measuring the Be atom and carrier profiles, it is shown that annealing conditions necessary for optimum Be activation in the InP cap layer are compatible with good profile control for Be in InGaAs. There is a slight transfer of Be across the interface during annealing, which is important, if the pn-junction is intended to be close to the hetero-interface. 14 refs., 5 figs

Additional details

Publishing Information

Imprint Title
Ion beam processing of advanced electronic materials
Imprint Pagination
393 p.
Journal Page Range
(Paper 46) p. 6.
Report number
CONF-8904275--

Conference

Title
Symposium on ion beam processing of advanced electronic materials.
Dates
25-27 Apr 1989.
Place
San Diego, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21049260
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ANNEALING; BERYLLIUM IONS; DIFFUSION; DOPED MATERIALS; EPITAXY; EXPERIMENTAL DATA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; ION IMPLANTATION; KEV RANGE 10-100; KEV RANGE 100-1000; P-N JUNCTIONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; DATA; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; INFORMATION; IONS; KEV RANGE; MATERIALS; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS