Published October 20, 1975
| Version v1
Journal article
Bound states of swift electrons for a <111> axis of silicon
- 1. Tomskij Politekhnicheskij Inst. (USSR)
Description
Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si <111> crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam. (Auth.)
Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Letters A
- Journal Volume
- 54
- Journal Issue
- 6
- Series
- Phys. Lett., A.
- Journal Page Range
- 447-448
- ISSN
- 0375-9601
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 7234554
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; BOUND STATE; ELECTRON BEAMS; ELECTRON CHANNELING; MEV RANGE 01-10; P STATES; QUANTUM MECHANICS; S STATES; SCHROEDINGER EQUATION; SILICON
- Descriptors DEC
- BEAMS; CHANNELING; DIFFERENTIAL EQUATIONS; DISTRIBUTION; ELEMENTS; ENERGY LEVELS; ENERGY RANGE; EQUATIONS; LEPTON BEAMS; MECHANICS; MEV RANGE; PARTICLE BEAMS; SEMIMETALS
Optional Information
- Notes
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