Published August 9, 2006 | Version v1
Journal article

Bi doped CdTe: increasing potentialities of CdTe based solar cells

  • 1. Departamento de Fisica de Materiales, Universidad Autonoma de Madrid (UAM), Cantoblanco, Madrid 28049 (Spain)
  • 2. Escuela Superior de Fisica y Matematicas-Instituto Politecnico Nacional, C.P. 07738, Mexico DF (Mexico)

Description

CdTe films were deposited by closed space sublimation from different CdTe:Bi targets (from non-doped up to 0.16 at.%) previously sintered by the Bridgman method. X-ray diffraction measurements demonstrate that CdTe films are formed and Bi is incorporated. Electrical and optical characterizations show that thin films reproduce the bulk material behaviour with a decrease in resistivity and an increase in photoconductivity. Also a limit is found in the increase of photoconductivity properties versus Bi concentration

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/18/7163/cm6_31_011.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
18
Journal Issue
31
Journal Page Range
p. 7163-7169
ISSN
0953-8984
CODEN
JCOMEL