Published April 29, 2020 | Version v1
Journal article

Layered SnSexS2−x alloys with fully chemical compositions and band gaps for photoelectrochemical water oxidation

  • 1. Department of Physics and Materials, Henan Normal University, Xinxiang, Henan 453007 (China)
  • 2. Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou, Guangdong 510631 (China)

Description

The water oxidation reaction plays a vital role in photoelectrochemical (PEC) water splitting, especially in a water-neutral electrolyte. In this work, photoanode SnSexS2−x alloys with fully tunable chemical compositions were synthesized by chemical vapor deposition (CVD). The modulated band gap values were also realized from 2.24 to 1.37 eV, and the corresponding optical properties were further modified in the SnSexS2−x alloys. Compared with pure SnS2 and SnSe2, especially in a 0.5 M Na2SO4 electrolyte without a sacrificial agent, the PEC performance of SnSexS2−x alloys can be obviously improved by increasing the photocurrents, which contributes to the excellent photoelectrical catalytic activity of SnSexS2−x alloys. This work provides the way to prepare environmentally friendly chalcogenide alloys for promising applications in optical and PEC water splitting. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/ab6d95

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
53
Journal Issue
18
Journal Page Range
[9 p.]
ISSN
0022-3727
CODEN
JPAPBE