Published 1970 | Version v1
Book

Radiation damage in silicon during ion implantation

Creators

  • 1. UKAEA Research Group, Harwell. Atomic Energy Research Group

Description

no abstract available

Additional details

Publishing Information

Publisher
Peter Peregrinus Limited.
Imprint Place
Stevenage
Imprint Title
European conference on ion implantation
Imprint Pagination
p. 212-218.

Conference

Title
European conference on ion implantation.
Dates
7 Sep 1970.
Place
Reading.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
2010341
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Progress Report
Descriptors DEI
AMORPHOUS STATE; ANNEALING; DISLOCATIONS; ELECTRIC PROPERTIES; HEAVY IONS; ION IMPLANTATION; RADIATION EFFECTS; RECRYSTALLIZATION; SEMICONDUCTORS; SILICON; STACKING FAULTS; TWINNING
Descriptors DEC
BEAMS; BOMBARDMENT; CRYSTALLIZATION; CRYSTALS; DEFECTS; ELECTRICITY; IMPURITIES; ION BEAMS; IONS; LATTICES