Effect of Sn Composition in Ge1−xSnx Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

The Ge1−xSnx layers were grown by using rapid thermal chemical-vapor deposition (RTCVD) on boron-doped p-type Si (100) substrates with Sn compositions up to x = 0.83%. In order to obtain effect of the Sn composition on the structural and the optical characteristics, we utilized highresolution X-ray diffraction (HR-XRD), etch pit density (EPD), atomic force microscopy (AFM), Raman spectroscopy, and photocurrent (PC) spectra. The Sn compositions in the Ge1−xSnx layers were found to be of x = 0.00%, 0.51%, 0.65%, and 0.83%. The root-mean-square (RMS) of the surface roughness of the Ge1−xSnx layer increased from 2.02 nm to 3.40 nm as the Sn composition was increased from 0.51% to 0.83%, and EPD was on the order of ∼ 108 cm −2. The Raman spectra consist of only one strong peak near 300 cm −1, which is assigned to the Ge-Ge LO peaks and the Raman peaks shift to the wave number with increasing Sn composition. Photocurrent spectra show near energy band gap peaks and their peak energies decrease with increasing Sn composition due to band-gap bowing in the Ge1−xSnx layer. An increase in the band gap bowing parameter was observed with increasing Sn composition.