Published April 9, 2007 | Version v1
Journal article

Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator

  • 1. Institute of Electronics Engineering, National Tsing Hua University, 101, Section 2 Kuang Fu Road Hsinchu, 300, Taiwan (China)
  • 2. Department of Electrical Engineering, National Chi Nan University, University Rd. Puli, Nantou Hsien, Nantou, 545, Taiwan (China)
  • 3. Asia Pacific Microsystems, Inc., No2. R and D Rd. VI, Science-based Industrial Park Hsinchu, 300, Taiwan (China)

Description

This work studies the relationship between the deposition process parameters and the properties of sputtered c-axis-oriented aluminum nitride (AlN) thin films. AlN films were deposited on a Pt electrode by reactive magnetron sputtering under various deposition conditions. The films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). A polycrystalline AlN film with highly c-axis-preferred orientation was achieved. The XRD rocking curve was 2.7o. The FESEM photographs also show that the AlN film has a dense hexagonal surface texture with uniform grain size and a highly ordered column structure

Additional details

Identifiers

DOI
10.1016/j.tsf.2006.12.181;
PII
S0040-6090(06)01722-6;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
515
Journal Issue
11
Journal Page Range
p. 4819-4825
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.