Published December 31, 2017 | Version v1
Journal article

Confinement – assisted shock-wave-induced thin-film delamination (SWIFD) of copper indium gallium diselenide (CIGS) on a flexible substrate

  • 1. Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstr. 15, 04318 Leipzig (Germany)
  • 2. Laser-Material Interaction Lab, 2011 Co-innovation Center, Nanjing University of Science & Technology, 210094 Nanjing (China)

Description

Highlights: • The shock-wave-induced thin-film delamination (SWIFD) process was studied. • At SWIFD a rear side irradiation induced a shockwave which induced a delamination. • The SWIFD process allows the non-thermal structuring of CIGS solar cell material. • The process is dependent on the laser parameter and on the confinement conditions. - Abstract: The laser structuring of CIGS (copper indium gallium (di)selenide) solar cell material without influence and damaging the functionality of the active layer is a challenge for laser methods The shock-wave-induced thin-film delamination (SWIFD) process allows structuring without thermal modifications due to a spatial separation of the laser absorption from the functional layer removal process. In the present study, SWIFD structuring of CIGS solar cell stacks was investigated. The rear side of the polyimide was irradiated with a KrF-Excimer laser. The laser-induced ablation process generates a traverse shock wave, and the interaction of the shock wave with the layer-substrate interface results in a delamination process. The effect of a water confinement on the SWIFD process was studied where the rear side of the substrate was covered with a ∼2 mm thick water layer. The resultant surface morphology was analysed and discussed. At a sufficient number of laser pulses N and laser fluences Φ, the CIGS layer can be selectively removed from the Mo back contact. The water confinement, as well as the increasing laser beam size A0 and N, results in the reduction of the necessary minimal laser fluence Φth. Further, the delaminated CIGS area increased with increasing Φ, N, and A0.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2017.07.226

Additional details

Identifiers

DOI
10.1016/j.apsusc.2017.07.226;
PII
S0169-4332(17)32226-2;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
426
Journal Page Range
p. 527-535
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.