Real-time observation of FIB-created dots and ripples on GaAs

We report a phenomenological study of Ga dots and ripples created by a focused ion beam (FIB) on the GaAs(001) surface. Real-time observation of dot diffusion and ripple formation was made possible by recording FIB movies. In the case of FIB irradiation with a 40 nA current of Ga+ ions accelerated under 40 kV with an incidence angle of θ = 300, increasing ion dose gives rise to three different regimes. In Regime 1, dots with lateral sizes in the range 50-460 nm are formed. Dots diffuse under continuous sputtering. In Regime 2, dots self-assemble into Bradley and Harper (BH) type ripples with a pseudo-period of λ = 1150 ± 25 nm. In Regime 3, ripples are eroded and the surface topology evolves into microplanes. In the case of normal incidence, FIB sputtering leads only to the formation of dots, without surface rippling