Transient radiation experiments for 8-bit PDSOI MCU

Two experiments have been designed for the 8-bit PDSOI MCU J80C51RH developed by Institute of Microelectronics of Chinese Academy of Sciences. Hardware and software for the experiments are also designed. The experiments have been performed in the Northwest Institute of Nuclear Technology with the equipment Qiangguang-I accelerator. Data of the experiments are successfully accessed and prove that the MCU J80C51RH can work perfectly in the γ ray radiation environment with dose rate up to 1E11 rad(Si)/s. The hardware and software can work well in the experiments. (authors)