Published 2008
| Version v1
Journal article
Determination of lateral inhomogeneity of the chemical composition profile of AlAs/GaAs distributed Bragg reflectors grown by MBE on (100)-oriented GaAs substrate
- 1. Institute of Electronic Materials Technology, Warsaw (Poland)
- 2. Institute of Experimental Physics, University of Warsaw, Warszawa (Poland)
- 3. Institute of Electron Technology, Warsaw (Poland)
Description
no abstract available
Additional details
Identifiers
Publishing Information
- Journal Title
- Synchrotron Radiation in Natural Science
- Journal Volume
- 7
- Journal Issue
- 1-2
- Journal Page Range
- p. 133
- ISSN
- 1644-7190
Conference
- Title
- 9. International School and Symposium on Synchrotron Radiation in Natural Science 2008
- Acronym
- ISSRNS 2008
- Dates
- 15-20 Jun 2008
- Place
- Ameliowka (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 40017292
- Subject category
- S36: MATERIALS SCIENCE; S43: PARTICLE ACCELERATORS;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; BRAGG REFLECTION; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; SYNCHROTRONS; X-RAY DIFFRACTION
- Descriptors DEC
- ACCELERATORS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CYCLIC ACCELERATORS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; PNICTIDES; REFLECTION; SCATTERING
Optional Information
- Notes
- 1 ref., 2 figs.