Published August 2011 | Version v1
Journal article Metadata-only

Strain accumulation in InAs/Inx Ga1-x As quantum dots

Creators

  • 1. Harbin Institute of Technology, School of Material Science and Technology, Harbin (China)
  • 2. Chinese Academy of Sciences, National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing (China)
  • 3. North China Electric Power University, School of Renewable Energy, Beijing (China)

Description

The effect of strain accumulation in the InAs/Inx Ga1-x As quantum dots (QDs) system was studied in this work. It was found that strain in the Inx Ga1-x As layer accumulation in the QD layer. This effect resulted in a dramatic reduction of growth mode transition thickness of the QD layer. For InAs/In0.25Ga0.75As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-011-6482-1

Additional details

Identifiers

DOI
10.1007/s00339-011-6482-1;

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
104
Journal Issue
2
Journal Page Range
p. 567-572
ISSN
0947-8396
CODEN
APAMFC

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
42082146
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
EMISSION SPECTRA; GALLIUM ARSENIDES; INDIUM ARSENIDES; INFRARED SPECTRA; LAYERS; MORPHOLOGY; PHOTOLUMINESCENCE; QUANTUM DOTS; STRAINS; SURFACE PROPERTIES; SURFACES; THICKNESS; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SCATTERING; SPECTRA