Computer modelling of planar dechannelling

A computer simulation model, incorporating the combined effects of binary (nuclear) collisions, thermal displacements of the lattice atoms and electron multiple scattering effects, has been used to investigate the dechannelling of ions in single crystals. The model was tested for 1.5 MeV hydrogen, deuterium and helium ions in the (100) and (110) planes of germanium. The qualitative trends predicted and the dechannelling rates calculated for these examples indicate that the model is reasonable. A significant feature of the computer model is the depth information that is obtained from it. (author)