Published December 21, 2008 | Version v1
Journal article Metadata-only

The compensation source in nitrogen doped ZnO

Creators

  • 1. Key Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)
  • 2. College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060 (China)

Description

Nitrogen doped zinc oxide (ZnO) films have been prepared by molecular beam epitaxy. The as-grown samples show n-type conduction, but they convert to p-type after being annealed in O2 atmosphere. X-ray photoelectron spectroscopy reveals that the conversion is mainly caused by the escaping of substituted N molecule (N2)O donors from the films, and photoluminescence spectroscopy confirms the extraction of (N2)O. The work shown in this paper reveals experimentally that the main compensation source in nitrogen doped ZnO is (N2)O donors instead of intrinsic donors or background impurities, and annealing in oxygen may be a promising route to p-ZnO.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/41/24/245402

Additional details

Identifiers

DOI
10.1088/0022-3727/41/24/245402;
PII
S0022-3727(08)93070-9;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
41
Journal Issue
24
Journal Page Range
[4 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41041707
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ATMOSPHERES; DOPED MATERIALS; IMPURITIES; MOLECULAR BEAM EPITAXY; NITROGEN; OXYGEN; PHOTOLUMINESCENCE; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; EPITAXY; FILMS; HEAT TREATMENTS; LUMINESCENCE; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; SPECTROSCOPY; ZINC COMPOUNDS