Published November 1997 | Version v1
Report Metadata-only

Production of point defects in silicon carbide semiconductor by irradiation of high energy ions

Creators

  • 1. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

Description

no abstract available

Part of:
TIARA annual report 1996

Additional details

Publishing Information

Imprint Title
TIARA annual report 1996
Imprint Pagination
292 p.
Journal Page Range
p. 13-14
Report number
JAERI-Review--97-015

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
29046883
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; ARGON 40 BEAMS; ATOMIC DISPLACEMENTS; COMPUTERIZED SIMULATION; ELECTRON SPIN RESONANCE; EXCITATION; MONOCRYSTALS; MONTE CARLO METHOD; NEON 20 BEAMS; POINT DEFECTS; RADIATION QUALITY; SEMICONDUCTOR MATERIALS; SILICON CARBIDES
Descriptors DEC
BEAMS; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ENERGY-LEVEL TRANSITIONS; HEAT TREATMENTS; ION BEAMS; MAGNETIC RESONANCE; MATERIALS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; RESONANCE; SILICON COMPOUNDS; SIMULATION

Optional Information